One-band density of states for some models for amorphous semiconductors

Publication information:

Richard Alben, L. Heimendahl, Peter Galison, and M. Long. 1975. “One-Band Density of States for Some Models for Amorphous Semiconductors”. Journal of Physics C: Solid State Physics, 8, 21, Pp. L468

Abstract

The authors use the equation-of-motion method to obtain directly the one-band density of states, projected on interior atoms, for three approximately 500-unit continuous random network models for amorphous group IV semiconductors and one 533-atom continuous random network model for amorphous arsenic. The presence of a sharp peak in the lower part of the band and the retreat of the lower band-edge are correlated with the concentration of five-membered rings of bonds.

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